Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization

R Vikas, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	4340-4343
Number of pages	4
Journal	Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres
Volume	45
Publication status	Published - 2006

Keywords

@article{126a279e9a434ed7859bb2e80879fe08,

title = "Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization",

keywords = "Elektrotechniek, Techniek, CWTS JFIS < 0.75",

author = "R Vikas and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

year = "2006",

language = "Undefined/Unknown",

volume = "45",

pages = "4340--4343",

journal = "Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Capping layer on thin Si film for ¿-Czochralski process with excimer laser crystallization

AU - Vikas, R

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2006

Y1 - 2006

KW - Elektrotechniek

KW - Techniek

KW - CWTS JFIS < 0.75

M3 - Article

SN - 0021-4922

VL - 45

SP - 4340

EP - 4343

JO - Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres

JF - Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres

ER -