Challenges and Solutions in Emerging Memory Testing

E.I. Vatajelu, Paolo Prinetto, Mottaqiallah Taouil, Said Hamdioui

Research output: Contribution to journalArticleScientificpeer-review

22 Citations (Scopus)
135 Downloads (Pure)


The research and prototyping of new memory technologies are getting a lot of attention in order to enable new (computer) architectures and provide new opportunities for today’s and future applications. Delivering high quality and reliability products was and will remain a crucial step in the introduction of new technologies. Therefore, appropriate fault modelling, test development and design for testability (DfT) is needed. This paper overviews and discusses the challenges and the emerging solutions in testing three classes of memories: 3D stacked memories, Resistive memories and Spin-Transfer-Torque Magnetic memories. Defects mechanisms, fault models, and emerging test solutions will be discussed.
Original languageEnglish
Article number7894207
Pages (from-to)493-506
Number of pages14
JournalIEEE Transactions on Emerging Topics in Computing
Issue number3
Publication statusPublished - 2019

Bibliographical note

Accepted author manuscript


  • Emerging Memories
  • 3D-SIC
  • Resistive RAM
  • Magnetic RAM
  • Defects
  • Fault Models
  • Test


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