Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

VI Kuznetsov, K Werner, S Radelaar, JW Metselaar

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
Original languageUndefined/Unknown
Pages (from-to)263-266
Number of pages4
JournalThin Solid Films
Volume294
Publication statusPublished - 1997

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Kuznetsov, VI., Werner, K., Radelaar, S., & Metselaar, JW. (1997). Characterisation of an n-type Si/SiGe modulation doped field-effect transistor. Thin Solid Films, 294, 263-266.