Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures

Rosario M. Incandela, Lin Song, Harald Homulle, Edoardo Charbon, Andrei Vladimirescu, Fabio Sebastiano

Research output: Contribution to journalArticleScientificpeer-review

47 Citations (Scopus)
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Abstract

Cryogenic characterization and modeling of two nanometer bulk CMOS technologies (0.16-μm and 40-nm) are presented in this paper. Several devices from both technologies were extensively characterized at temperatures of 4 K and below. Based on a detailed understanding of the device physics at deep-cryogenic temperatures, a compact model based on MOS11 and PSP was developed. In addition to reproducing the device DC characteristics, the accuracy and validity of the compact models are demonstrated by comparing time-and frequency-domain simulations of complex circuits, such as a ring oscillator and a low-noise amplifier (LNA), with the measurements at 4 K.

Original languageEnglish
Number of pages11
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
Publication statusPublished - 2018

Keywords

  • 4 K
  • characterization
  • CMOS
  • CMOS technology
  • cryo-CMOS
  • cryogenic
  • Cryogenic electronics
  • Cryogenics
  • Integrated circuit modeling
  • kink
  • LNA.
  • modeling
  • MOS devices
  • Quantum computing
  • Semiconductor device modeling

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