INIS
heating
100%
cryogenics
100%
modeling
100%
ambient temperature
60%
devices
60%
design
40%
temperature range
40%
control
20%
silicon diodes
20%
operation
20%
cmos circuits
20%
power density
20%
substrates
20%
mosfet
20%
distance
20%
temperature range 0273-0400 k
20%
geometry
20%
qubits
20%
silicon
20%
sensors
20%
data
20%
Engineering
Cryogenic Temperature
100%
Nanometre
100%
Heating
100%
Ambient Temperature
60%
Temperature Rise
40%
Temperature Range
40%
Temperature
40%
Design Flow
20%
Sensor
20%
Simple Model
20%
Silicon Substrate
20%
Thermal Resistance
20%
Room Temperature
20%
Design
20%
Test Structure
20%
Networks (Circuits)
20%
Control Qubit
20%
Measured Data
20%
Integrated Circuit Design
20%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Power Density
20%
Physics
Mathematical Model
100%
Heating
100%
Cryogenic Temperature
100%
Temperature
80%
Cryogenics
60%
Ambient Temperature
60%
Silicon
40%
Model
20%
Substrates
20%
Geometry
20%
Diode
20%
Technology
20%
Distance
20%
Quantum Dot
20%
Impact
20%
Room Temperature
20%
Thermal Resistance
20%
Field Effect Transistor
20%
Material Science
Temperature
100%
Characterization
100%
Devices
33%
Silicon
22%
Density
11%
Electronic Circuit
11%
Diode
11%
Metal-Oxide-Semiconductor Field-Effect Transistor
11%
Heat Resistance
11%
Keyphrases
Channel Temperature
40%
ASIC Design Flow
20%
Actual Device
20%
Gate Resistance
20%