A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300°C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 °C to 300 °C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.
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- Acetone sensor
- gas sensor
- high electron mobility transistor (HEMT)