Characterization of an Acetone Detector based on a Suspended WO3-Gate AlGaN/GaN HEMT Integrated with Micro-heater

Jianwen Sun, Robert Sokolovskij, Elina Iervolino, Fabio Santagata, Zewen Liu, Pasqualina M. Sarro, Guogi Zhang

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
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Abstract

A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300°C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 °C to 300 °C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.
Original languageEnglish
Article number8822592
Pages (from-to)4373-4379
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number10
DOIs
Publication statusPublished - 2019

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • Acetone sensor
  • AlGaN/GaN
  • WO₃
  • gas sensor
  • high electron mobility transistor (HEMT)

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