Abstract
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300°C) increased the sensitivity to up to 25.7% and drain current change I DS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 °C to 300 °C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.
Original language | English |
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Article number | 8822592 |
Pages (from-to) | 4373-4379 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2019 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- Acetone sensor
- AlGaN/GaN
- WO₃
- gas sensor
- high electron mobility transistor (HEMT)