Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

Harald Homulle; Edoardo Charbon; Fabio Sebastiano

doi:10.1109/ICSENS.2016.7808759

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

Harald Homulle, Edoardo Charbon, Fabio Sebastiano

Electronic Instrumentation

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

14 Citations (Scopus)

Abstract

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperature range from 7 K to 294 K. Although PNP non-idealities, such as finite current gain and parasitic base resistance, deteriorate at lower temperature, device operation similar to room temperature is observed down to 70 K, while operation at lower temperatures is limited by carrier freeze-out in the base region and limited current gain. These results demonstrate the feasibility of temperature sensors in standard CMOS at cryogenic temperature.

Original language	English
Title of host publication	2016 IEEE Sensors Proceedings
Editors	E. Fontana, C. Ruiz-Zamarreno
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	3
ISBN (Electronic)	978-1-4799-8287-5
DOIs	https://doi.org/10.1109/ICSENS.2016.7808759
Publication status	Published - 2016
Event	IEEE Sensors 2016: 15th IEEE Sensors Conference - Caribe Royale All-Suite Hotel and Convention Center, Orlando, FL, United States Duration: 30 Oct 2016 → 2 Nov 2016 Conference number: 15

Conference

Conference	IEEE Sensors 2016
Country/Territory	United States
City	Orlando, FL
Period	30/10/16 → 2/11/16

Keywords

CMOS
cryogenics
substrate bipolar transistors
temperature sensors

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10.1109/ICSENS.2016.7808759

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title = "Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS",

abstract = "This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperature range from 7 K to 294 K. Although PNP non-idealities, such as finite current gain and parasitic base resistance, deteriorate at lower temperature, device operation similar to room temperature is observed down to 70 K, while operation at lower temperatures is limited by carrier freeze-out in the base region and limited current gain. These results demonstrate the feasibility of temperature sensors in standard CMOS at cryogenic temperature.",

keywords = "CMOS, cryogenics, substrate bipolar transistors, temperature sensors",

author = "Harald Homulle and Edoardo Charbon and Fabio Sebastiano",

year = "2016",

doi = "10.1109/ICSENS.2016.7808759",

language = "English",

editor = "E. Fontana and C. Ruiz-Zamarreno",

booktitle = "2016 IEEE Sensors Proceedings",

publisher = "IEEE",

address = "United States",

note = "IEEE Sensors 2016 : 15th IEEE Sensors Conference ; Conference date: 30-10-2016 Through 02-11-2016",

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Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS. / Homulle, Harald; Charbon, Edoardo ; Sebastiano, Fabio.
2016 IEEE Sensors Proceedings. ed. / E. Fontana; C. Ruiz-Zamarreno. Piscataway, NJ: IEEE, 2016. 7808759.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

AU - Homulle, Harald

AU - Charbon, Edoardo

AU - Sebastiano, Fabio

N1 - Conference code: 15

PY - 2016

Y1 - 2016

N2 - This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperature range from 7 K to 294 K. Although PNP non-idealities, such as finite current gain and parasitic base resistance, deteriorate at lower temperature, device operation similar to room temperature is observed down to 70 K, while operation at lower temperatures is limited by carrier freeze-out in the base region and limited current gain. These results demonstrate the feasibility of temperature sensors in standard CMOS at cryogenic temperature.

AB - This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperature range from 7 K to 294 K. Although PNP non-idealities, such as finite current gain and parasitic base resistance, deteriorate at lower temperature, device operation similar to room temperature is observed down to 70 K, while operation at lower temperatures is limited by carrier freeze-out in the base region and limited current gain. These results demonstrate the feasibility of temperature sensors in standard CMOS at cryogenic temperature.

KW - CMOS

KW - cryogenics

KW - substrate bipolar transistors

KW - temperature sensors

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DO - 10.1109/ICSENS.2016.7808759

M3 - Conference contribution

BT - 2016 IEEE Sensors Proceedings

A2 - Fontana, E.

A2 - Ruiz-Zamarreno, C.

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE Sensors 2016

Y2 - 30 October 2016 through 2 November 2016

ER -

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

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