Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

E. S. Malotaux; M. Spirito

doi:10.1109/mwsym.2016.7539967

Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

E. S. Malotaux, M. Spirito

Electronics

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Abstract

In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power (NEP) by optimizing both the bias and the poly-silicon load resistor. Moreover, broadband characterization of un-matched power detectors are performed to present responsivity and NEP data for multi-octave bandwidth from 1-67 GHz. The NEP of the realized detectors is less than 15 pW/√Hz over the entire characterization band, and given a 1 kHz modulated RF input power, the NEP of the realized detectors at 63 GHz is 2.6 pW/√Hz and 4.4 pW/√Hz for the CB- and CE-detector respectively.

Original language	English
Title of host publication	2016 IEEE MTT-S International Microwave Symposium (IMS)
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-5090-0698-4
DOIs	https://doi.org/10.1109/mwsym.2016.7539967
Publication status	Published - 11 Aug 2016
Event	IEEE MTT-S International Microwave Symposium (IMS) 2016 - San Francisco, United States Duration: 22 May 2016 → 27 May 2016

Conference

Conference	IEEE MTT-S International Microwave Symposium (IMS) 2016
Abbreviated title	IMS 2016
Country/Territory	United States
City	San Francisco
Period	22/05/16 → 27/05/16

Keywords

poly-silicon resistor
Square law detector
millimeter-wave
BiCMOS
SiGe
flicker noise
1/f-noise

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10.1109/mwsym.2016.7539967

Cite this

@inproceedings{981a918987cf40dea5e2e25c50cae387,

title = "Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging",

abstract = "In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power (NEP) by optimizing both the bias and the poly-silicon load resistor. Moreover, broadband characterization of un-matched power detectors are performed to present responsivity and NEP data for multi-octave bandwidth from 1-67 GHz. The NEP of the realized detectors is less than 15 pW/√Hz over the entire characterization band, and given a 1 kHz modulated RF input power, the NEP of the realized detectors at 63 GHz is 2.6 pW/√Hz and 4.4 pW/√Hz for the CB- and CE-detector respectively.",

keywords = "poly-silicon resistor, Square law detector, millimeter-wave, BiCMOS, SiGe, flicker noise, 1/f-noise ",

author = "Malotaux, {E. S.} and M. Spirito",

year = "2016",

month = aug,

day = "11",

doi = "10.1109/mwsym.2016.7539967",

language = "English",

pages = "1--4",

booktitle = "2016 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "IEEE",

address = "United States",

note = "IEEE MTT-S International Microwave Symposium (IMS) 2016, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",

}

TY - GEN

T1 - Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

AU - Malotaux, E. S.

AU - Spirito, M.

PY - 2016/8/11

Y1 - 2016/8/11

N2 - In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power (NEP) by optimizing both the bias and the poly-silicon load resistor. Moreover, broadband characterization of un-matched power detectors are performed to present responsivity and NEP data for multi-octave bandwidth from 1-67 GHz. The NEP of the realized detectors is less than 15 pW/√Hz over the entire characterization band, and given a 1 kHz modulated RF input power, the NEP of the realized detectors at 63 GHz is 2.6 pW/√Hz and 4.4 pW/√Hz for the CB- and CE-detector respectively.

AB - In this paper, we present the characterization and optimization strategy of two mm-wave square-law detectors, fabricated in a 0.25μm SiGe BiCMOS process, namely a common-emitter (CE) and a common-base (CB). The detectors are designed to provide a broadband noise equivalent power (NEP) by optimizing both the bias and the poly-silicon load resistor. Moreover, broadband characterization of un-matched power detectors are performed to present responsivity and NEP data for multi-octave bandwidth from 1-67 GHz. The NEP of the realized detectors is less than 15 pW/√Hz over the entire characterization band, and given a 1 kHz modulated RF input power, the NEP of the realized detectors at 63 GHz is 2.6 pW/√Hz and 4.4 pW/√Hz for the CB- and CE-detector respectively.

KW - poly-silicon resistor

KW - Square law detector

KW - millimeter-wave

KW - BiCMOS

KW - SiGe

KW - flicker noise

KW - 1/f-noise

U2 - 10.1109/mwsym.2016.7539967

DO - 10.1109/mwsym.2016.7539967

M3 - Conference contribution

SP - 1

EP - 4

BT - 2016 IEEE MTT-S International Microwave Symposium (IMS)

PB - IEEE

T2 - IEEE MTT-S International Microwave Symposium (IMS) 2016

Y2 - 22 May 2016 through 27 May 2016

ER -

Characterization of Broadband Low-NEP SiGe Square-Law Detectors for mm-wave Passive Imaging

Abstract

Conference

Keywords

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