Original language | Undefined/Unknown |
---|---|
Pages (from-to) | 718-720 |
Number of pages | 3 |
Journal | Materials Science Forum |
Volume | 255 |
Issue number | 257 |
Publication status | Published - 1997 |
Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
M Clement, JMM de Nijs, H Schut, A van Veen
Research output: Contribution to journal › Article › Professional