Characterization of the defect density states in MoOx for c-Si solar cell applications

D. Scirè, Robert Macaluso, Mauro Mosca, S. Mirabella, Antonino Gulino, O. Isabella, M. Zeman, I. Crupi

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)


Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

Original languageEnglish
Article number108135
Pages (from-to)1-5
Number of pages5
JournalSolid-State Electronics
Publication statusPublished - 2021

Bibliographical note

Accepted author manuscript


  • c-Si solar cell
  • Density of states
  • Molybdenum oxide
  • Photovoltaic
  • Small polaron
  • Transition metal oxide


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