Characterization of the defect density states in MoOx for c-Si solar cell applications

D. Scirè; Robert Macaluso; Mauro Mosca; S.  Mirabella; Antonino Gulino; O. Isabella; M. Zeman; I. Crupi

doi:10.1016/j.sse.2021.108135

Characterization of the defect density states in MoO_x for c-Si solar cell applications

D. Scirè, Robert Macaluso, Mauro Mosca, S. Mirabella, Antonino Gulino, O. Isabella, M. Zeman, I. Crupi

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

38 Downloads (Pure)

Abstract

Thin layers of MoO_x have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoO_x films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

Original language	English
Article number	108135
Pages (from-to)	1-5
Number of pages	5
Journal	Solid-State Electronics
Volume	185
DOIs	https://doi.org/10.1016/j.sse.2021.108135
Publication status	Published - 2021

Bibliographical note

Accepted author manuscript

Keywords

c-Si solar cell
Density of states
Molybdenum oxide
Photovoltaic
Small polaron
Transition metal oxide

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.sse.2021.108135

SSE_Daniele_manuscript_review_08_june - accepted versionAccepted author manuscript, 882 KBLicence: CC BY-NC-ND

Cite this

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title = "Characterization of the defect density states in MoOx for c-Si solar cell applications",

abstract = "Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.",

keywords = "c-Si solar cell, Density of states, Molybdenum oxide, Photovoltaic, Small polaron, Transition metal oxide",

author = "D. Scir{\`e} and Robert Macaluso and Mauro Mosca and S. Mirabella and Antonino Gulino and O. Isabella and M. Zeman and I. Crupi",

note = "Accepted author manuscript",

year = "2021",

doi = "10.1016/j.sse.2021.108135",

language = "English",

volume = "185",

pages = "1--5",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Characterization of the defect density states in MoOx for c-Si solar cell applications

AU - Scirè, D.

AU - Macaluso, Robert

AU - Mosca, Mauro

AU - Mirabella, S.

AU - Gulino, Antonino

AU - Isabella, O.

AU - Zeman, M.

AU - Crupi, I.

N1 - Accepted author manuscript

PY - 2021

Y1 - 2021

N2 - Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

AB - Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

KW - c-Si solar cell

KW - Density of states

KW - Molybdenum oxide

KW - Photovoltaic

KW - Small polaron

KW - Transition metal oxide

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DO - 10.1016/j.sse.2021.108135

M3 - Article

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SN - 0038-1101

VL - 185

SP - 1

EP - 5

JO - Solid-State Electronics

JF - Solid-State Electronics

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