Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

S. Thomas; A. Jovic; B. Morana; F. Buja; A. Gkouzou; G. Pandraud; P.M. Sarro

doi:10.1016/j.proeng.2016.11.379

Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

S. Thomas, A. Jovic, B. Morana, F. Buja, A. Gkouzou, G. Pandraud, P.M. Sarro

Research output: Contribution to journal › Conference article › Scientific › peer-review

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Abstract

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO₂ bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.

Original language	English
Pages (from-to)	1144-1147
Number of pages	4
Journal	Procedia Engineering
Volume	168
DOIs	https://doi.org/10.1016/j.proeng.2016.11.379
Publication status	Published - 2016
Event	Eurosensors 2016: The 30th anniversary Eurosensors Conference - Budapest, Hungary Duration: 4 Sep 2016 → 7 Sep 2016

Keywords

actuators
coefficent of thermal exoansion
silicon carbide

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10.1016/j.proeng.2016.11.379

29537638Final published version, 508 KBLicence: CC BY-NC-ND

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title = "Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators",

abstract = "In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.",

keywords = "actuators, coefficent of thermal exoansion, silicon carbide",

author = "S. Thomas and A. Jovic and B. Morana and F. Buja and A. Gkouzou and G. Pandraud and P.M. Sarro",

year = "2016",

doi = "10.1016/j.proeng.2016.11.379",

language = "English",

volume = "168",

pages = "1144--1147",

journal = "Procedia Engineering",

issn = "1877-7058",

publisher = "Elsevier",

note = "Eurosensors 2016 : The 30th anniversary Eurosensors Conference ; Conference date: 04-09-2016 Through 07-09-2016",

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T1 - Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

AU - Thomas, S.

AU - Jovic, A.

AU - Morana, B.

AU - Buja, F.

AU - Gkouzou, A.

AU - Pandraud, G.

AU - Sarro, P.M.

PY - 2016

Y1 - 2016

N2 - In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.

AB - In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.

KW - actuators

KW - coefficent of thermal exoansion

KW - silicon carbide

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M3 - Conference article

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EP - 1147

JO - Procedia Engineering

JF - Procedia Engineering

SN - 1877-7058

T2 - Eurosensors 2016

Y2 - 4 September 2016 through 7 September 2016

ER -

Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

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Keywords

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