Characterization of top-gated Si/SiGe devices for spin qubit applications

Fabio Ansaloni, Christian Volk, Anasua Chatterjee, Ferdinand Kuemmeth

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

Spins in gate-defined silicon quantum dots are at the forefront of solid-state qubit research. We characterize top-gated devices fabricated from Si/SiGe heterostructures, demonstrating the formation of stable double and triple quantum dots with proximal charge-sensing dots. We also demonstrate fabrication of linear dot arrays with overlapping gate technology, thereby significantly increasing the density of control electrodes relative to our single-gate-layer devices.

Original languageEnglish
Title of host publication2019 Silicon Nanoelectronics Workshop, SNW 2019
EditorsTakahiro Shinada , Toshifumi Irisawa , Katsuhiro Tomioka
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Electronic)978-4-8634-8702-4
ISBN (Print)978-4-8634-8702-4
DOIs
Publication statusPublished - 2019
Event24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan
Duration: 9 Jun 201910 Jun 2019

Conference

Conference24th Silicon Nanoelectronics Workshop, SNW 2019
CountryJapan
CityKyoto
Period9/06/1910/06/19

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