@inproceedings{8f5a465f1dbf4634bd46af1ee5d12f2f,
title = "Characterization of top-gated Si/SiGe devices for spin qubit applications",
abstract = "Spins in gate-defined silicon quantum dots are at the forefront of solid-state qubit research. We characterize top-gated devices fabricated from Si/SiGe heterostructures, demonstrating the formation of stable double and triple quantum dots with proximal charge-sensing dots. We also demonstrate fabrication of linear dot arrays with overlapping gate technology, thereby significantly increasing the density of control electrodes relative to our single-gate-layer devices.",
author = "Fabio Ansaloni and Christian Volk and Anasua Chatterjee and Ferdinand Kuemmeth",
year = "2019",
doi = "10.23919/SNW.2019.8782944",
language = "English",
isbn = "978-4-8634-8702-4",
series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
editor = "{Shinada }, {Takahiro } and {Irisawa }, {Toshifumi } and {Tomioka }, {Katsuhiro }",
booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
address = "United States",
note = "24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",
}