Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

F Sarubbi, TLM Scholtes, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

71 Citations (Scopus)

Original language	English
Pages (from-to)	162-173
Number of pages	12
Journal	Journal of Electronic Materials
Volume	39
Issue number	2
DOIs	https://doi.org/10.1007/s11664-009-1018-6
Publication status	Published - 2009

NEO

Keywords

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title = "Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation",

keywords = "CWTS JFIS < 0.75",

author = "F Sarubbi and TLM Scholtes and LK Nanver",

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TY - JOUR

T1 - Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

AU - Sarubbi, F

AU - Scholtes, TLM

AU - Nanver, LK

N1 - NEO

PY - 2009

Y1 - 2009

KW - CWTS JFIS < 0.75

U2 - 10.1007/s11664-009-1018-6

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M3 - Article

SN - 0361-5235

VL - 39

SP - 162

EP - 173

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 2

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