Chemical vapor deposition of Ga dopants for fabricating ultrashallow p-n junctions at 400 *C

A Sammak, L Qi, WB De Boer, LK Nanver

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

8 Citations (Scopus)
Original languageEnglish
Title of host publication2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings
EditorsT-A Tang, Y-L Jiang
Place of PublicationPiscataway, NJ
PublisherIEEE Society
Pages969-971
Number of pages3
ISBN (Print)978-1-4244-5797-7
DOIs
Publication statusPublished - 2010
EventICSICT 2010: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010
Conference number: 10

Publication series

Name
PublisherIEEE

Conference

ConferenceICSICT 2010
Abbreviated titleICSICT 2010
CountryChina
CityShanghai
Period1/11/104/11/10

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