Chemical vs. Physical factors in dry etching induced damage in the Si/GexSi1-x system

RG van Veen, MJ Teepen, EWJM van der Drift, T Zijlstra, K Werner, AH Verbruggen, S Radelaar

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	55-58
Number of pages	4
Journal	Microelectronic Engineering
Volume	35
Publication status	Published - 1997

Cite this

@article{0010be7c0d73459a8a8f64c9c3a58cc1,

title = "Chemical vs. Physical factors in dry etching induced damage in the Si/GexSi1-x system",

author = "{van Veen}, RG and MJ Teepen and {van der Drift}, EWJM and T Zijlstra and K Werner and AH Verbruggen and S Radelaar",

year = "1997",

language = "Undefined/Unknown",

volume = "35",

pages = "55--58",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Chemical vs. Physical factors in dry etching induced damage in the Si/GexSi1-x system

AU - van Veen, RG

AU - Teepen, MJ

AU - van der Drift, EWJM

AU - Zijlstra, T

AU - Werner, K

AU - Verbruggen, AH

AU - Radelaar, S

PY - 1997

Y1 - 1997

M3 - Article

SN - 0167-9317

VL - 35

SP - 55

EP - 58

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -