CMOS-compatible fabrication of metamaterial-based absorbers for the mid-IR spectral range

Ehsan Karimi Shahmarvandi, Mohammadamir Ghaderi, Reinoud F. Wolffenbuttel

Research output: Contribution to journalConference articleScientificpeer-review

15 Downloads (Pure)

Abstract

A CMOS-compatible approach is presented for the fabrication of a wideband mid-IR metamaterial-based absorber on top of a Si3N4 membrane, which contains poly-Si thermopiles. The application is in IR microspectrometers that are intended for implementation in portable microsystem for use in absorption spectroscopy. Although Au is the conventional material of choice, we demonstrate by simulation that near-perfect absorption can be achieved over a wider band when using the more CMOS-compatible Al. The absorber design is based on Al disk resonators and an Al backplane, which are separated by a SiO2 layer. The fabrication process involves the deposition of Al and SiO2 layers on top of a Si3N4 membrane, lithography and a lift-off process for patterning of the top Al layer.
Original languageEnglish
Article number012033
Pages (from-to)1-6
Number of pages6
JournalJournal of Physics: Conference Series
Volume757
Issue number1
DOIs
Publication statusPublished - 2016

Fingerprint Dive into the research topics of 'CMOS-compatible fabrication of metamaterial-based absorbers for the mid-IR spectral range'. Together they form a unique fingerprint.

Cite this