@article{77e9f3798b17425bae17b79fc304949f,
title = "CMOS SPAD based on photo-carrier diffusion achieving PDP >40% from 440 to 580 nm at 4 v excess bias",
author = "C Veerappan and E Charbon",
note = "Harvest Date of publication 13-8-2015",
year = "2015",
doi = "10.1109/LPT.2015.2468067",
language = "English",
volume = "27",
pages = "2445--2448",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
number = "23",
}