CMOS SPAD based on photo-carrier diffusion achieving PDP >40% from 440 to 580 nm at 4 v excess bias

C Veerappan, E Charbon

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)
Original languageEnglish
Pages (from-to)2445-2448
Number of pages4
JournalIEEE Photonics Technology Letters
Volume27
Issue number23
DOIs
Publication statusPublished - 2015

Bibliographical note

Harvest
Date of publication 13-8-2015

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