Combined Fabrication and Performance Evaluation of TOPCon Back-Contact Solar Cells with Lateral Power Metal-Oxide-Semiconductor Field-Effect Transistors on a Single Substrate

David A. van Nijen*, Tristan Stevens, Yavuzhan Mercimek, Guangtao Yang, René A.C.M.M. van Swaaij, Miro Zeman, Olindo Isabella, Patrizio Manganiello

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Nowadays, an increasing share of photovoltaic (PV) systems makes use of module- or submodule-level power electronics (PE). Furthermore, PE is used in stand-alone devices powered by PV-storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein, the COSMOS device is introduced, denoting COmbined Solar cell and metal-oxide-semiconductor field-effect transistor (MOSFET). Specifically, the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel-oxide passivated contacts (TOPCon) on a single wafer is reported. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost-effective integration of the MOSFET. Both n-type solar cells with integrated p-channel MOSFETs (PMOS) and p-type solar cells with integrated n-channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on-resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off-state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n-type and p-type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices.

Original languageEnglish
Number of pages13
JournalSolar RRL
DOIs
Publication statusPublished - 2024

Keywords

  • COSMOS
  • crystalline silicon
  • integration
  • interdigitated back contact
  • monolithic integration
  • MOSFET
  • photovoltatronics
  • polycrystalline silicon on oxide
  • power electronics
  • tunnel-oxide passivated contacts

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