Compact Modeling of Physical Mechanisms Present in the Weak Breakdown Regime of Advanced Si and SiGe Bipolar Transistors

Engineering

• Models 100%
• Mechanisms 100%
• Bipolar Transistor 100%
• Characteristics 56%
• Model Parameter 16%
• Semiconductor Device 12%
• Physical Basis 12%
• Current Collector 12%
• Circuit Designer 8%
• Optimization 8%
• Relaxation Length 8%
• Temperature Coefficient 8%
• Networks (Circuits) 8%
• Measured Data 8%
• Energy Balance Equation 4%
• Measurement Data 4%
• Final Expression 4%
• Electric Field 4%
• Reliable Communication 4%
• Temperature Dependency 4%
• Simulated Data 4%
• Demonstrates 4%
• Temperature Condition 4%
• Fit Model 4%
• Emitter Voltage 4%
• Industrial Applications 4%
• Foundations 4%
• Electron Energy 4%
• Circuit Element 4%
• Determines 4%
• Development 4%
• Forward Bias 4%
• Accurate Simulation 4%
• Heating Effect 4%
• Input Data 4%
• Increasing Demand 4%
• Internals 4%
• Wireless Communication 4%
• Field Distribution 4%
• Voltage Fluctuation 4%
• Elementary Function 4%
• Scaling Temperature 4%
• Emitter Resistance 4%
• Elements 4%
• Electronic Devices 4%
• Semiconductor 4%

INIS

• germanium silicides 100%
• temperature coefficient 10%
• multiplication factors 5%
• electron temperature 5%