Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter

F Vitale; R Pijper; R van der Toorn

doi:10.1109/BCTM.2011.6082776

Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM)
Editors	A Joseph, JD Cressler
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	179-182
Number of pages	4
ISBN (Print)	978-1-61284-166-3
DOIs	https://doi.org/10.1109/BCTM.2011.6082776
Publication status	Published - 2011
Event	2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011) - Piscataway, NJ, USA Duration: 9 Oct 2011 → 11 Oct 2011

Publication series

Name
Publisher	IEEE

Conference

Conference	2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011)
Period	9/10/11 → 11/10/11

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Access to Document

10.1109/BCTM.2011.6082776

Cite this

Vitale, F., Pijper, R., & van der Toorn, R. (2011). Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter. In A. Joseph, & JD. Cressler (Eds.), 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM) (pp. 179-182). IEEE Society. https://doi.org/10.1109/BCTM.2011.6082776

Vitale, F ; Pijper, R ; van der Toorn, R. / Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter. 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM). editor / A Joseph ; JD Cressler. Piscataway, NJ, USA : IEEE Society, 2011. pp. 179-182

@inproceedings{638761d5b98d4cf9a3d98e5f3bb4de68,

title = "Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "F Vitale and R Pijper and {van der Toorn}, R",

year = "2011",

doi = "10.1109/BCTM.2011.6082776",

language = "English",

isbn = "978-1-61284-166-3",

publisher = "IEEE Society",

pages = "179--182",

editor = "A Joseph and JD Cressler",

booktitle = "2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM)",

note = "2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011) ; Conference date: 09-10-2011 Through 11-10-2011",

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Vitale, F, Pijper, R & van der Toorn, R 2011, Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter. in A Joseph & JD Cressler (eds), 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM). IEEE Society, Piscataway, NJ, USA, pp. 179-182, 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011), 9/10/11. https://doi.org/10.1109/BCTM.2011.6082776

Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter. / Vitale, F; Pijper, R; van der Toorn, R.
2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM). ed. / A Joseph; JD Cressler. Piscataway, NJ, USA: IEEE Society, 2011. p. 179-182.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter

AU - Vitale, F

AU - Pijper, R

AU - van der Toorn, R

PY - 2011

Y1 - 2011

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

U2 - 10.1109/BCTM.2011.6082776

DO - 10.1109/BCTM.2011.6082776

M3 - Conference contribution

SN - 978-1-61284-166-3

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EP - 182

BT - 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM)

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A2 - Cressler, JD

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM 2011)

Y2 - 9 October 2011 through 11 October 2011

ER -

Vitale F, Pijper R, van der Toorn R. Compact noise modeling of SiGe heterojunction bipolar transistors: Relevance of base-collector shot noise correlation and non-quasi static effects in the quasi-neutral emitter. In Joseph A, Cressler JD, editors, 2011 IEEE Bipolar/BiCMOS Technology and Circuits Meeting (BCTM). Piscataway, NJ, USA: IEEE Society. 2011. p. 179-182 doi: 10.1109/BCTM.2011.6082776