Comparative analysis of compact noise model formulations for SiGe-HBTs

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Proceedings 2013 IEEE Bipolar/BiCMOS circuits and technology
Editors	B Hecht, DYC Lie
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	131-134
Number of pages	4
ISBN (Print)	978-1-4799-0126-6/13
Publication status	Published - 2013
Event	2013 IEEE BCTM - Piscataway, NJ, USA Duration: 30 Sept 2013 → 3 Oct 2014

Name
Publisher	IEEE

Conference	2013 IEEE BCTM
Period	30/09/13 → 3/10/14

Keywords

@inproceedings{7207c3eff9ca4319b041438b853e019b,

title = "Comparative analysis of compact noise model formulations for SiGe-HBTs",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "F Vitale and {van der Toorn}, R",

year = "2013",

language = "English",

isbn = "978-1-4799-0126-6/13",

publisher = "IEEE",

pages = "131--134",

editor = "B Hecht and DYC Lie",

booktitle = "Proceedings 2013 IEEE Bipolar/BiCMOS circuits and technology",

address = "United States",

note = "2013 IEEE BCTM ; Conference date: 30-09-2013 Through 03-10-2014",

}

TY - GEN

T1 - Comparative analysis of compact noise model formulations for SiGe-HBTs

AU - Vitale, F

AU - van der Toorn, R

PY - 2013

Y1 - 2013

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 978-1-4799-0126-6/13

SP - 131

EP - 134

BT - Proceedings 2013 IEEE Bipolar/BiCMOS circuits and technology

A2 - Hecht, B

A2 - Lie, DYC

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 2013 IEEE BCTM

Y2 - 30 September 2013 through 3 October 2014

ER -