@inproceedings{95f49e4ef0b64b3ab03b605d0bf79723,
title = "Comparative Study of the Resolution of Ge-on-Si Photodetectors for 1μ m Infrared Signals",
abstract = "Most of the studies on narrow-band near-infrared detection reported so far are related to the 1.3μm and 1.55μm spectral windows. There is insufficient research work done on radiation detection in the narrow band around 1 μm wavelength, which is just outside the Si (0.95μ m) and GaAs (0.85μ m) effective cut-off spectral sensitivity. This paper presents a p+n Ge-on-Si detector with a customized large active window, employing the PureGaB technology, to detect radiation in a very narrow band around 1μ m. The advantages of the proposed detector are: (1) CMOS-compatibility and micro-spectroscopic capability; (2) low dark current and high photoresponsivity, compared to similar devices reported in the literature; (3) enhanced sensitivity to weak radiation by realizing an ultra-shallow and very thin depletion region. These detectors can be good candidates for measuring the YAG laser radiation and measuring stray radiation in photolithography.",
keywords = "1-μ m Infrared, Ge-on-Si Photodiode, Infrared detection, SiGe Junction",
author = "Mojtaba Jahangiri and Paolo Sberna and Amir Sammak and Stoyan Nihtianov",
year = "2022",
doi = "10.1109/ONCON56984.2022.10126983",
language = "English",
series = "1st IEEE Industrial Electronics Society Annual On-Line Conference, ONCON 2022",
publisher = "IEEE",
booktitle = "1st IEEE Industrial Electronics Society Annual On-Line Conference, ONCON 2022",
address = "United States",
note = "1st IEEE Industrial Electronics Society Annual On-Line Conference, ONCON 2022 ; Conference date: 09-12-2022 Through 11-12-2022",
}