Comparing the high-frequency performance of box-Ge and graded-Ge SiGe HBT's

LCM van Oever; LK Nanver; JW Slotboom

Comparing the high-frequency performance of box-Ge and graded-Ge SiGe HBT's

LCM van Oever, LK Nanver, JW Slotboom

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	SAFE-ProRISC-SeSens 2000: proceedings
Editors	JP Veen
Place of Publication	Utrecht
Publisher	STW Technology Foundation
Pages	119-123
Number of pages	5
ISBN (Print)	90-73461-23-5
Publication status	Published - 2000
Event	Semiconductor Advances for Future Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology, Veldhoven - Utrecht Duration: 28 Nov 2001 → 30 Nov 2001

Publication series

Name
Publisher	STW technology foundation

Conference

Conference	Semiconductor Advances for Future Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology, Veldhoven
Period	28/11/01 → 30/11/01

Keywords

ZX Int.klas.verslagjaar < 2002

Cite this

@inproceedings{9d69f00426bd414287acc8cbf7e7c00f,

title = "Comparing the high-frequency performance of box-Ge and graded-Ge SiGe HBT's",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "{van Oever}, LCM and LK Nanver and JW Slotboom",

year = "2000",

language = "Undefined/Unknown",

isbn = "90-73461-23-5",

publisher = "STW Technology Foundation",

pages = "119--123",

editor = "{JP Veen}",

booktitle = "SAFE-ProRISC-SeSens 2000: proceedings",

note = "null ; Conference date: 28-11-2001 Through 30-11-2001",

}

van Oever, LCM, Nanver, LK & Slotboom, JW 2000, Comparing the high-frequency performance of box-Ge and graded-Ge SiGe HBT's. in JP Veen (ed.), SAFE-ProRISC-SeSens 2000: proceedings. STW Technology Foundation, Utrecht, pp. 119-123, Semiconductor Advances for Future Electronics - Program for Research on Integrated Systems and Circuits - Semiconductor Sensor and Actuator Technology, Veldhoven, 28/11/01.

TY - GEN

T1 - Comparing the high-frequency performance of box-Ge and graded-Ge SiGe HBT's

AU - van Oever, LCM

AU - Nanver, LK

AU - Slotboom, JW

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Conference contribution

SN - 90-73461-23-5

SP - 119

EP - 123

BT - SAFE-ProRISC-SeSens 2000: proceedings

A2 - JP Veen, null

PB - STW Technology Foundation

CY - Utrecht

Y2 - 28 November 2001 through 30 November 2001

ER -