Comparison of ELTs with different shapes and a regular layout transistor in 180 nm CMOS process

Sadik Ilik, Nergiz Şahin Solmaz, Aykut Kabaoǧlu, Mustafa Berke Yelten

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Radiation tolerance of electronic devices and systems is mandatory for defence and space applications. In order to increase this tolerance for CMOS FETs, different layout techniques such as enclosed layout transistors (ELTs) can be employed. In this paper, a regular layout transistor is compared with two ELTs, which have square and octagonal shaped gates. For this purpose, a test circuit in 180 nm device technology has been designed and fabricated. Experimental comparison of the same size transistors with different layouts is performed in terms of the impact of process variations, and radiation tolerance. It is concluded that ELTs with different shapes behave similarly under radiation at least upto a dose of 1 Mrad. Furthermore, octagonal shaped ELTs are slightly less impacted from process variations in regard to square ELTs.

Original languageEnglish
Title of host publicationSMACD 2019 - 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, Proceedings
PublisherIEEE
Pages21-24
Number of pages4
ISBN (Electronic)9781728112015
DOIs
Publication statusPublished - 2019
Externally publishedYes
Event16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2019 - Lausanne, Switzerland
Duration: 15 Jul 201918 Jul 2019

Publication series

NameSMACD 2019 - 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, Proceedings

Conference

Conference16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2019
Country/TerritorySwitzerland
CityLausanne
Period15/07/1918/07/19

Keywords

  • ELT
  • process variation
  • radiation gamma rays
  • TID

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