Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates

H Kukner; F Khan; P Weckx; P Raghavan; S Hamdioui; B Kaczer; F Catthoor; L van der Perre; R Lauwereins; G Groeseneken

doi:10.1109/TDMR.2013.2267274

Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates

H Kukner, F Khan, P Weckx, P Raghavan, S Hamdioui, B Kaczer, F Catthoor, L van der Perre, R Lauwereins, G Groeseneken

Computer Engineering

Research output: Contribution to journal › Article › Scientific › peer-review

45 Citations (Scopus)

Original language	English
Pages (from-to)	182-193
Number of pages	12
Journal	IEEE Transactions on Device and Materials Reliability
Volume	14
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2013.2267274
Publication status	Published - 2014

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10.1109/TDMR.2013.2267274

Cite this

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title = "Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates",

author = "H Kukner and F Khan and P Weckx and P Raghavan and S Hamdioui and B Kaczer and F Catthoor and {van der Perre}, L and R Lauwereins and G Groeseneken",

year = "2014",

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language = "English",

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AU - Khan, F

AU - Weckx, P

AU - Raghavan, P

AU - Hamdioui, S

AU - Kaczer, B

AU - Catthoor, F

AU - van der Perre, L

AU - Lauwereins, R

AU - Groeseneken, G

PY - 2014

Y1 - 2014

U2 - 10.1109/TDMR.2013.2267274

DO - 10.1109/TDMR.2013.2267274

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SN - 1530-4388

VL - 14

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EP - 193

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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