Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates

H Kukner, F Khan, P Weckx, P Raghavan, S Hamdioui, B Kaczer, F Catthoor, L van der Perre, R Lauwereins, G Groeseneken

Research output: Contribution to journalArticleScientificpeer-review

33 Citations (Scopus)
Original languageEnglish
Pages (from-to)182-193
Number of pages12
JournalIEEE Transactions on Device and Materials Reliability
Volume14
Issue number1
DOIs
Publication statusPublished - 2014

Cite this

Kukner, H., Khan, F., Weckx, P., Raghavan, P., Hamdioui, S., Kaczer, B., Catthoor, F., van der Perre, L., Lauwereins, R., & Groeseneken, G. (2014). Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates. IEEE Transactions on Device and Materials Reliability, 14(1), 182-193. https://doi.org/10.1109/TDMR.2013.2267274