Comparison of Si and GaN power devices used in PV module integrated converters

M Acanski, J Popovi¿-Gerber, JA Ferreira

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

    36 Citations (Scopus)

    Abstract

    Using the newly developed enhancement-mode Galium-Nitride-on-Silicon (eGaN) devices with high conductivity and very fast switching speed a breakthrough in switching performance can be achieved. Multi-megahertz switching frequency capability will significantly reduce the size of passive components, adding the cost benefits and increasing the integration level and power density. As to date, the use of GaN devices in power converters is still in its infancy, but its widespread application is a near reality. PV converter industry is one of the areas which would greatly benefit from the new GaN technology. The most important requirements for a PV converter, efficiency and cost effectiveness, can both be addressed with improved switching devices. This paper presents a performance comparison of a PV module integrated DC-DC converter based on commercially available GaN and Si power devices. The presented results show that the first generation of GaN devices outperforms the best in class Si devices. Since GaN is immature technology, further improvements will be seen in the years to come.
    Original languageEnglish
    Title of host publicationProceedings of IEEE Energy Conversion Congress and Exposition (ECCE 2011)
    EditorsJM Miller, U Deshpande
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE Society
    Pages1217-1223
    Number of pages7
    ISBN (Print)978-1-4577-0541-0
    DOIs
    Publication statusPublished - 2011
    EventECCE 2011 - Piscataway, NJ, USA
    Duration: 17 Sep 201122 Sep 2011

    Publication series

    Name
    PublisherIEEE

    Conference

    ConferenceECCE 2011
    Period17/09/1122/09/11

    Keywords

    • conference contrib. refereed
    • Conf.proc. > 3 pag

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  • Cite this

    Acanski, M., Popovi¿-Gerber, J., & Ferreira, JA. (2011). Comparison of Si and GaN power devices used in PV module integrated converters. In JM. Miller, & U. Deshpande (Eds.), Proceedings of IEEE Energy Conversion Congress and Exposition (ECCE 2011) (pp. 1217-1223). IEEE Society. https://doi.org/10.1109/ECCE.2011.6063915