Complementary study of defects in GaN by photo-etching and TEM

JL Weyer, L Macht, FD Tichelaar, HW Zandbergen, PR Hageman, PK Larsen

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	280-284
Number of pages	5
Journal	Materials Science and Engineering B: Advanced Functional Solid-state Materials
Volume	91
Publication status	Published - 2002

Keywords

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title = "Complementary study of defects in GaN by photo-etching and TEM",

keywords = "ZX CWTS JFIS < 1.00",

author = "JL Weyer and L Macht and FD Tichelaar and HW Zandbergen and PR Hageman and PK Larsen",

year = "2002",

language = "Undefined/Unknown",

volume = "91",

pages = "280--284",

journal = "Materials Science and Engineering B: Advanced Functional Solid-state Materials",

issn = "0921-5107",

publisher = "Elsevier",

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TY - JOUR

T1 - Complementary study of defects in GaN by photo-etching and TEM

AU - Weyer, JL

AU - Macht, L

AU - Tichelaar, FD

AU - Zandbergen, HW

AU - Hageman, PR

AU - Larsen, PK

PY - 2002

Y1 - 2002

KW - ZX CWTS JFIS < 1.00

M3 - Article

SN - 0921-5107

VL - 91

SP - 280

EP - 284

JO - Materials Science and Engineering B: Advanced Functional Solid-state Materials

JF - Materials Science and Engineering B: Advanced Functional Solid-state Materials

ER -