Conductance along the interface formed by 400 °C pure boron deposition on silicon

L Qi, LK Nanver

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)
Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number2
DOIs
Publication statusPublished - 2015

Bibliographical note

Harvest
Published online 25-12-2014

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