Conducted EMI in SiC JFET inverters due to substrate capacitive coupling

X Gong; JA Ferreira

doi:10.1109/APEC.2013.6520644

Conducted EMI in SiC JFET inverters due to substrate capacitive coupling

X Gong, JA Ferreira

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	Proceedings - 28th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2013)
Editors	S Abedinpour
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE Society
Pages	2479-2486
Number of pages	8
ISBN (Print)	978-1-4673-4354-1
DOIs	https://doi.org/10.1109/APEC.2013.6520644
Publication status	Published - 2013
Event	APEC 2013, Long Beach, California - Piscataway, NJ, USA Duration: 17 Mar 2013 → 21 Mar 2013

Publication series

Name
Publisher	IEEE

Conference

Conference	APEC 2013, Long Beach, California
Period	17/03/13 → 21/03/13

Bibliographical note

Harvest

Access to Document

10.1109/APEC.2013.6520644

Cite this

@inproceedings{53b497bba5264e03a385a025fe0b08d5,

title = "Conducted EMI in SiC JFET inverters due to substrate capacitive coupling",

author = "X Gong and JA Ferreira",

note = "Harvest; APEC 2013, Long Beach, California ; Conference date: 17-03-2013 Through 21-03-2013",

year = "2013",

doi = "10.1109/APEC.2013.6520644",

language = "English",

isbn = "978-1-4673-4354-1",

publisher = "IEEE Society",

pages = "2479--2486",

editor = "S Abedinpour",

booktitle = "Proceedings - 28th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2013)",

}

Conducted EMI in SiC JFET inverters due to substrate capacitive coupling. / Gong, X; Ferreira, JA.
Proceedings - 28th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2013). ed. / S Abedinpour. Piscataway, NJ, USA: IEEE Society, 2013. p. 2479-2486.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Conducted EMI in SiC JFET inverters due to substrate capacitive coupling

AU - Gong, X

AU - Ferreira, JA

N1 - Harvest

PY - 2013

Y1 - 2013

U2 - 10.1109/APEC.2013.6520644

DO - 10.1109/APEC.2013.6520644

M3 - Conference contribution

SN - 978-1-4673-4354-1

SP - 2479

EP - 2486

BT - Proceedings - 28th annual IEEE Applied Power Electronics Conference and Exposition (APEC 2013)

A2 - Abedinpour, S

PB - IEEE Society

CY - Piscataway, NJ, USA

T2 - APEC 2013, Long Beach, California

Y2 - 17 March 2013 through 21 March 2013

ER -