Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

M Popadic, TLM Scholtes, WB De Boer, F Sarubbi, LK Nanver

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	2323-2328
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	11
DOIs	https://doi.org/DOI: 10.1007/s11664-009-0897-x
Publication status	Published - 2009

Keywords

@article{9855121b320e4184a5df9db55e96b564,

title = "Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers",

keywords = "CWTS JFIS < 0.75",

author = "M Popadic and TLM Scholtes and {De Boer}, WB and F Sarubbi and LK Nanver",

year = "2009",

doi = "DOI: 10.1007/s11664-009-0897-x",

language = "Undefined/Unknown",

volume = "38",

pages = "2323--2328",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "11",

}

TY - JOUR

T1 - Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

AU - Popadic, M

AU - Scholtes, TLM

AU - De Boer, WB

AU - Sarubbi, F

AU - Nanver, LK

PY - 2009

Y1 - 2009

KW - CWTS JFIS < 0.75

U2 - DOI: 10.1007/s11664-009-0897-x

DO - DOI: 10.1007/s11664-009-0897-x

M3 - Article

SN - 0361-5235

VL - 38

SP - 2323

EP - 2328

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -