Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Maria El Abbassi, Mickael L. Perrin, Gabriela Borin Barin, Sara Sangtarash, Jan Overbeck, Oliver Braun, Colin J. Lambert, Qiang Sun, Thorsten Prechtl, More Authors

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)
46 Downloads (Pure)


Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs' molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices.

Original languageEnglish
Pages (from-to)5754-5762
Number of pages9
JournalACS Nano
Issue number5
Publication statusPublished - 2020


  • Coulomb blockade
  • device integration
  • graphene nanoribbons
  • molecular spectroscopy
  • Raman spectroscopy


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