Original language | English |
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Pages (from-to) | 50-50 |
Number of pages | 1 |
Journal | Solid-State Electronics |
Volume | 119 |
DOIs |
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Publication status | Published - 2016 |
Bibliographical note
Refers To:Negin Golshani, Jaber Derakhshandeh, C.I.M. Beenakker, R. Ishihara
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Solid-State Electronics, Volume 105, March 2015, Pages 6-11
(DOI:10.1016/j.sse.2014.11.022))