Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Negin Golshani, Jaber Derakhshandeh Kheljani, C.I.M. Beenakker, R. Ishihara

Research output: Contribution to journalComment/Letter to the editor

Original languageEnglish
Pages (from-to)50-50
Number of pages1
JournalSolid-State Electronics
Volume119
DOIs
Publication statusPublished - 2016

Bibliographical note

Refers To:
Negin Golshani, Jaber Derakhshandeh, C.I.M. Beenakker, R. Ishihara
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Solid-State Electronics, Volume 105, March 2015, Pages 6-11
(DOI:10.1016/j.sse.2014.11.022))

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