Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Negin Golshani; Jaber Derakhshandeh Kheljani; C.I.M. Beenakker; R. Ishihara

doi:10.1016/j.sse.2016.01.011

Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Negin Golshani, Jaber Derakhshandeh Kheljani, C.I.M. Beenakker, R. Ishihara

Electronic Components, Technology and Materials

Research output: Contribution to journal › Comment/Letter to the editor › Scientific

Original language	English
Pages (from-to)	50-50
Number of pages	1
Journal	Solid-State Electronics
Volume	119
DOIs	https://doi.org/10.1016/j.sse.2016.01.011
Publication status	Published - 2016

Bibliographical note

Refers To:
Negin Golshani, Jaber Derakhshandeh, C.I.M. Beenakker, R. Ishihara
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Solid-State Electronics, Volume 105, March 2015, Pages 6-11
(DOI:10.1016/j.sse.2014.11.022))

Access to Document

10.1016/j.sse.2016.01.011

Cite this

@article{8680c7f497c94b66b2dbe2296b677f9b,

title = "Corrigendum to: {"}High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications{"}",

author = "Negin Golshani and {Derakhshandeh Kheljani}, Jaber and C.I.M. Beenakker and R. Ishihara",

note = "Refers To: Negin Golshani, Jaber Derakhshandeh, C.I.M. Beenakker, R. Ishihara High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications Solid-State Electronics, Volume 105, March 2015, Pages 6-11 (DOI:10.1016/j.sse.2014.11.022))",

year = "2016",

doi = "10.1016/j.sse.2016.01.011",

language = "English",

volume = "119",

pages = "50--50",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

}

TY - JOUR

T1 - Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

AU - Golshani, Negin

AU - Derakhshandeh Kheljani, Jaber

AU - Beenakker, C.I.M.

AU - Ishihara, R.

N1 - Refers To: Negin Golshani, Jaber Derakhshandeh, C.I.M. Beenakker, R. Ishihara High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications Solid-State Electronics, Volume 105, March 2015, Pages 6-11 (DOI:10.1016/j.sse.2014.11.022))

PY - 2016

Y1 - 2016

UR - http://resolver.tudelft.nl/uuid://8680c7f4-97c9-4b66-b2db-e2296b677f9b

U2 - 10.1016/j.sse.2016.01.011

DO - 10.1016/j.sse.2016.01.011

M3 - Comment/Letter to the editor

SN - 0038-1101

VL - 119

SP - 50

EP - 50

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Bibliographical note

Access to Document

Other files and links

Research output

High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

Cite this