Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Negin Golshani, Jaber Derakhshandeh Kheljani, C.I.M. Beenakker, R. Ishihara

Electronic Components, Technology and Materials

Research output: Contribution to journal › Comment/Letter to the editor › Scientific

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2015

High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
Golshani, N., Derakhshandeh Kheljani, J., Beenakker, CIM. & Ishihara, R., 2015, In: Solid-State Electronics. 105, p. 6-11 6 p.
Research output: Contribution to journal › Article › Scientific › peer-review

Open Access

5 Citations (Scopus)