Cryogenic Comparator Characterization and Modeling for a Cryo-CMOS 7b 1-GSa/s SAR ADC

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Abstract

This paper reports the experimental characterization and modelling of a stand-Alone StrongARM comparator at both room temperature (RT) and cryogenic temperature (4.2 K). The observed 6-dB improvement in the comparator input noise at 4.2 K is attributed to the reduction of the thermal noise and to the suppressed shot noise in the MOS transistors becoming dominant at cryogenic temperature. The proposed model is employed in the design of a loop-unrolled 2\times time-interleaved 1-GSa/s 7b SAR ADC for spin-qubit readout. As predicted by the comparator model, the ADC is noise-limited at RT to a SNDR of 38.2 dB at Nyquist input, while this improves to 41.1 dB at 4.2 K, now limited by distortion, thus resulting in the state-of-The-Art FoMw for cryo-CMOS ADC of 20.9 fJ/conv-step.

Original languageEnglish
Title of host publicationESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages53-56
Number of pages4
ISBN (Electronic)978-1-6654-8494-7
DOIs
Publication statusPublished - 2022
Event48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 - Milan, Italy
Duration: 19 Sept 202222 Sept 2022

Publication series

NameESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings

Conference

Conference48th IEEE European Solid State Circuits Conference, ESSCIRC 2022
Country/TerritoryItaly
CityMilan
Period19/09/2222/09/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

  • ADC
  • Cryo-CMOS
  • latching comparator
  • noise measurement
  • SAR
  • strongARM

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