Current dependence of reversible electromigration induced resistance changes in short Al lines and interpretation of irreversible effects

AH Verbruggen, MJC van de Homberg, AJ Kalkman, JR Kraayeveld, AWJ Willemsen, S Radelaar

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	MRS Symposium Proceedings Materials Reliability in Microelectronics VI
Place of Publication	San Francisco
Publisher	Materials Research Society
Pages	121-126
Number of pages	6
Publication status	Published - 1996

Name
Publisher	Materials Research Society

Cite this

@inproceedings{95f2aa6bf28142b1809d50e7016bf360,

title = "Current dependence of reversible electromigration induced resistance changes in short Al lines and interpretation of irreversible effects",

author = "AH Verbruggen and {van de Homberg}, MJC and AJ Kalkman and JR Kraayeveld and AWJ Willemsen and S Radelaar",

year = "1996",

language = "Undefined/Unknown",

publisher = "Materials Research Society",

pages = "121--126",

booktitle = "MRS Symposium Proceedings Materials Reliability in Microelectronics VI",

address = "United States",

}

Verbruggen, AH, van de Homberg, MJC, Kalkman, AJ, Kraayeveld, JR, Willemsen, AWJ & Radelaar, S 1996, Current dependence of reversible electromigration induced resistance changes in short Al lines and interpretation of irreversible effects. in MRS Symposium Proceedings Materials Reliability in Microelectronics VI. Materials Research Society, San Francisco, pp. 121-126.

Current dependence of reversible electromigration induced resistance changes in short Al lines and interpretation of irreversible effects. / Verbruggen, AH; van de Homberg, MJC; Kalkman, AJ et al.
MRS Symposium Proceedings Materials Reliability in Microelectronics VI. San Francisco: Materials Research Society, 1996. p. 121-126.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - Current dependence of reversible electromigration induced resistance changes in short Al lines and interpretation of irreversible effects

AU - Verbruggen, AH

AU - van de Homberg, MJC

AU - Kalkman, AJ

AU - Kraayeveld, JR

AU - Willemsen, AWJ

AU - Radelaar, S

PY - 1996

Y1 - 1996

M3 - Conference contribution

SP - 121

EP - 126

BT - MRS Symposium Proceedings Materials Reliability in Microelectronics VI

PB - Materials Research Society

CY - San Francisco

ER -