CVD delta-doped boron surface layers for ultra-shallow junction formation

F Sarubbi; LK Nanver; TLM Scholtes

CVD delta-doped boron surface layers for ultra-shallow junction formation

F Sarubbi, LK Nanver, TLM Scholtes

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

28 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
Editors	F Roozeboom
Place of Publication	Cancun, Mexico
Publisher	Electrochemical Society
Pages	35-44
Number of pages	10
Publication status	Published - 2006
Event	210th ElectroChemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006

Publication series

Name
Publisher	ElectroChemical Society

Conference

Conference	210th ElectroChemical Society Meeting
Period	29/10/06 → 3/11/06

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{fadaa6d0c7cd41998143112d8f80738e,

title = "CVD delta-doped boron surface layers for ultra-shallow junction formation",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "F Sarubbi and LK Nanver and TLM Scholtes",

year = "2006",

language = "Undefined/Unknown",

publisher = "Electrochemical Society",

pages = "35--44",

editor = "F Roozeboom",

booktitle = "Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment",

note = "null ; Conference date: 29-10-2006 Through 03-11-2006",

}

Sarubbi, F, Nanver, LK & Scholtes, TLM 2006, CVD delta-doped boron surface layers for ultra-shallow junction formation. in F Roozeboom (ed.), Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. Electrochemical Society, Cancun, Mexico, pp. 35-44, 210th ElectroChemical Society Meeting, 29/10/06.

CVD delta-doped boron surface layers for ultra-shallow junction formation. / Sarubbi, F; Nanver, LK; Scholtes, TLM.

Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. ed. / F Roozeboom. Cancun, Mexico : Electrochemical Society, 2006. p. 35-44.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - CVD delta-doped boron surface layers for ultra-shallow junction formation

AU - Sarubbi, F

AU - Nanver, LK

AU - Scholtes, TLM

PY - 2006

Y1 - 2006

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 35

EP - 44

BT - Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment

A2 - Roozeboom, F

PB - Electrochemical Society

CY - Cancun, Mexico

Y2 - 29 October 2006 through 3 November 2006

ER -