CVD delta-doped boron surface layers for ultra-shallow junction formation

F Sarubbi, LK Nanver, TLM Scholtes

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

22 Citations (Scopus)
Original languageUndefined/Unknown
Title of host publicationElectrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment
EditorsF Roozeboom
Place of PublicationCancun, Mexico
PublisherElectrochemical Society
Pages35-44
Number of pages10
Publication statusPublished - 2006
Event210th ElectroChemical Society Meeting - Cancun, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

Name
PublisherElectroChemical Society

Conference

Conference210th ElectroChemical Society Meeting
Period29/10/063/11/06

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

Cite this

Sarubbi, F., Nanver, LK., & Scholtes, TLM. (2006). CVD delta-doped boron surface layers for ultra-shallow junction formation. In F. Roozeboom (Ed.), Electrochemical Society Transactions, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (pp. 35-44). Electrochemical Society.