Damp heat related degradation mechanisms within CIGS solar cells

Mirjam Theelen, Frank de Graaf, Felix Daume, Nicolas Barreau, Z. Vroon, Miro Zeman

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

Degradation rates and mechanisms for molybdenum back contacts and ZnO:Al front contacts exposed to damp heat were obtained from literature and experiments. It was found that molybdenum back contacts with a higher density and covered by a MoSe2 film are more stable than their low density, bare counterparts. For ZnO:Al front contacts, various material changes, including thickness, deposition temperatures and doping concentration increase as well as post-deposition treatments can lead to a more stable material. Moreover, the degradation rate of encapsulated and non-encapsulated CIGS solar cells and modules exposed to damp heat were determined It was observed that in general, exposure to damp heat led to a reduction in efficiency, mostly caused by a reduction in Voc and FF. However, it was found that very large differences exist between samples.

Original languageEnglish
Title of host publication43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages2292-2297
Number of pages6
ISBN (Electronic)978-1-5090-2724-8
DOIs
Publication statusPublished - 2016
EventPVSC 2016: 43rd IEEE Photovoltaic Specialists Conference - Portland, OR, United States
Duration: 5 Jun 201610 Jun 2016
Conference number: 43
http://www.ieee-pvsc.org/PVSC44/

Conference

ConferencePVSC 2016
Abbreviated titlePVSC 2016
CountryUnited States
CityPortland, OR
Period5/06/1610/06/16
Internet address

Keywords

  • Al
  • CIGS
  • damp heat
  • humidity
  • modules
  • molybdenum
  • solar cells
  • stability
  • ZnO

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  • Cite this

    Theelen, M., de Graaf, F., Daume, F., Barreau, N., Vroon, Z., & Zeman, M. (2016). Damp heat related degradation mechanisms within CIGS solar cells. In 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 (pp. 2292-2297). [7750045] IEEE. https://doi.org/10.1109/PVSC.2016.7750045