Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters

G Pfanner, C Freysoldt, J Neugebauer, F Inam, D Drabold, K Jarolímek, M Zeman

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)
Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume87
Issue number12
DOIs
Publication statusPublished - 2013

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