Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

Binh Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, Fanming Qu, Arjan J.A. Beukman, Folkert K. De Vries, Jasper Van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich

Research output: Contribution to journalArticleScientificpeer-review

28 Citations (Scopus)
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Abstract

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Original languageEnglish
Article number077701
Number of pages5
JournalPhysical Review Letters
Volume117
Issue number7
DOIs
Publication statusPublished - 12 Aug 2016

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