Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

Binh Minh Nguyen; Andrey A. Kiselev; Ramsey Noah; Wei Yi; Fanming Qu; Arjan J.A. Beukman; Folkert K. De Vries; Jasper Van Veen; Stevan Nadj-Perge; Leo P. Kouwenhoven; Morten Kjaergaard; Henri J. Suominen; Fabrizio Nichele; Charles M. Marcus; Michael J. Manfra; Marko Sokolich

doi:10.1103/PhysRevLett.117.077701

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

Binh Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, Fanming Qu, Arjan J.A. Beukman, Folkert K. De Vries, Jasper Van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich

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Abstract

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

Original language	English
Article number	077701
Number of pages	5
Journal	Physical Review Letters
Volume	117
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.117.077701
Publication status	Published - 12 Aug 2016

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PhysRevLett.117.077701Final published version, 1.58 MBLicence: CC BY

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Nguyen, B. M., Kiselev, A. A., Noah, R., Yi, W., Qu, F., Beukman, A. J. A., De Vries, F. K., Van Veen, J., Nadj-Perge, S., Kouwenhoven, L. P., Kjaergaard, M., Suominen, H. J., Nichele, F., Marcus, C. M., Manfra, M. J., & Sokolich, M. (2016). Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry. Physical Review Letters, 117(7), Article 077701. https://doi.org/10.1103/PhysRevLett.117.077701

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title = "Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry",

abstract = "A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.",

author = "Nguyen, {Binh Minh} and Kiselev, {Andrey A.} and Ramsey Noah and Wei Yi and Fanming Qu and Beukman, {Arjan J.A.} and {De Vries}, {Folkert K.} and {Van Veen}, Jasper and Stevan Nadj-Perge and Kouwenhoven, {Leo P.} and Morten Kjaergaard and Suominen, {Henri J.} and Fabrizio Nichele and Marcus, {Charles M.} and Manfra, {Michael J.} and Marko Sokolich",

year = "2016",

month = aug,

day = "12",

doi = "10.1103/PhysRevLett.117.077701",

language = "English",

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Nguyen, BM, Kiselev, AA, Noah, R, Yi, W, Qu, F, Beukman, AJA, De Vries, FK, Van Veen, J, Nadj-Perge, S, Kouwenhoven, LP, Kjaergaard, M, Suominen, HJ, Nichele, F, Marcus, CM, Manfra, MJ & Sokolich, M 2016, 'Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry', Physical Review Letters, vol. 117, no. 7, 077701. https://doi.org/10.1103/PhysRevLett.117.077701

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AU - Nguyen, Binh Minh

AU - Kiselev, Andrey A.

AU - Noah, Ramsey

AU - Yi, Wei

AU - Qu, Fanming

AU - Beukman, Arjan J.A.

AU - De Vries, Folkert K.

AU - Van Veen, Jasper

AU - Nadj-Perge, Stevan

AU - Kouwenhoven, Leo P.

AU - Kjaergaard, Morten

AU - Suominen, Henri J.

AU - Nichele, Fabrizio

AU - Marcus, Charles M.

AU - Manfra, Michael J.

AU - Sokolich, Marko

PY - 2016/8/12

Y1 - 2016/8/12

N2 - A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

AB - A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.

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Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

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