Abstract
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
| Original language | English |
|---|---|
| Article number | 077701 |
| Number of pages | 5 |
| Journal | Physical Review Letters |
| Volume | 117 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 12 Aug 2016 |