Deep reactive ion etching in through-silicon via technology

F Roozeboom; MA Blauw; Y Lamy; E van Grunsven; W Dekkers; JF Verhoeven; F van den Heuvel; EWJM van der Drift; WMM Kessels; MCM van de Sanden

Deep reactive ion etching in through-silicon via technology

F Roozeboom, MA Blauw, Y Lamy, E van Grunsven, W Dekkers, JF Verhoeven, F van den Heuvel, EWJM van der Drift, WMM Kessels, MCM van de Sanden

QN/Kavli Nanolab Delft

Research output: Chapter in Book/Conference proceedings/Edited volume › Chapter › Scientific

Original language	Undefined/Unknown
Title of host publication	3D interconnect and packaging technology
Editors	PE Garrou, P Ramm, CA Bower
Place of Publication	New York
Publisher	John Wiley & Sons
Pages	47-91
Number of pages	298
ISBN (Print)	978-3-527-32034-9
Publication status	Published - 2007

Bibliographical note

Nog niet eerder opgevoerd

Keywords

authored books
Boekdeel internat.wet

Cite this

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author = "F Roozeboom and MA Blauw and Y Lamy and {van Grunsven}, E and W Dekkers and JF Verhoeven and {van den Heuvel}, F and {van der Drift}, EWJM and WMM Kessels and {van de Sanden}, MCM",

note = "Nog niet eerder opgevoerd",

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language = "Undefined/Unknown",

isbn = "978-3-527-32034-9",

pages = "47--91",

editor = "PE Garrou and P Ramm and CA Bower",

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T1 - Deep reactive ion etching in through-silicon via technology

AU - Roozeboom, F

AU - Blauw, MA

AU - Lamy, Y

AU - van Grunsven, E

AU - Dekkers, W

AU - Verhoeven, JF

AU - van den Heuvel, F

AU - van der Drift, EWJM

AU - Kessels, WMM

AU - van de Sanden, MCM

N1 - Nog niet eerder opgevoerd

PY - 2007

Y1 - 2007

KW - authored books

KW - Boekdeel internat.wet

M3 - Chapter

SN - 978-3-527-32034-9

SP - 47

EP - 91

BT - 3D interconnect and packaging technology

A2 - Garrou, PE

A2 - Ramm, P

A2 - Bower, CA

PB - John Wiley & Sons

CY - New York

ER -