Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation

H. Aziza, S. Hamdioui, M. Fieback, M. Taouil, M. Moreau

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

Multi-Level Cell (MLC) technology can greatly reduce Resistive RAM (RRAM) die sizes to achieve a breakthrough in cost structure. In this paper, a novel design scheme is proposed to realize reliable and uniform MLC RRAM operation without the need of any read verification. MLC is implemented based on a strict control of the cell programming currents of 1T-1R HfO2-based RRAM cells. Specifically, a self-adaptive write termination circuit is proposed to control the RRAM RESET current. Eight different resistance states are obtained by varying the compliance current which is defined as the minimal current allowed by the termination circuit in the RESET direction.
Original languageEnglish
Title of host publication2021 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Place of PublicationPiscataway
PublisherIEEE
Pages1877-1880
Number of pages4
ISBN (Electronic)978-3-9819263-5-4
ISBN (Print)978-1-7281-6336-9
DOIs
Publication statusPublished - 2021
Event2021 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Virtual, Virtual/Grenoble, France
Duration: 1 Feb 20215 Feb 2021
https://www.date-conference.com/

Conference

Conference2021 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Abbreviated titleDATE'21
CountryFrance
CityVirtual/Grenoble
Period1/02/215/02/21
Internet address

Keywords

  • Multi-level cell
  • MLC
  • RRAM
  • Oxide-based RAM (OxRAM)
  • variability
  • current control

Fingerprint

Dive into the research topics of 'Density Enhancement of RRAMs using a RESET Write Termination for MLC Operation'. Together they form a unique fingerprint.

Cite this