Deposition Mechanism of Aluminum Oxide on Quantum Dot Films at Atmospheric Pressure and Room Temperature

D. Valdesueiro Gonzalez, Mahesh Krishna Prabhu, Carlos Guerra-Nunez, C. S Suchand Sandeep, Sachin Kinge, Laurens D A Siebbeles, Louis C P M De Smet, Gabrie M H Meesters, Michiel T. Kreutzer, Arjan J. Houtepen, J. Ruud Van Ommen

Research output: Contribution to journalArticleScientificpeer-review

26 Citations (Scopus)
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Abstract

Stability of quantum dot (QD) films is an issue of concern for applications in devices such as solar cells, LEDs, and transistors. This paper analyzes and optimizes the passivation of such QD films using gas-phase deposition, resulting in enhanced stability. Crucially, we deposited alumina at economically attractive conditions, room temperature and atmospheric pressure, on (1,2-ethanediamine) capped PbSe QD films using an approach based on atomic layer deposition (ALD), with trimethylaluminum (TMA) and water as precursors. We performed coating experiments from 1 to 25 cycles on the QD films, finding that alumina formed from the first exposure of TMA. X-ray photoelectron spectroscopy points to the presence of oxygen-rich compounds on the bare QD films, most likely from entrapped solvent molecules during the assembly of the QD films. These oxygenated compounds and the amine groups of the organic ligands react with TMA in the first cycle, resulting in a fast growth of alumina. Using 10 cycles resulted in a QD film that was optically stable for at least 27 days. Depositing alumina at ambient conditions is preferred, since the production of the QD films is also carried out at room temperature and atmospheric pressure, allowing combination of both processes in a single go.

Original languageEnglish
Pages (from-to)4266-4275
Number of pages10
JournalThe Journal of Physical Chemistry C
Volume120
Issue number8
DOIs
Publication statusPublished - 3 Mar 2016

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