Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

C Biasotto, AM Daltrini, RC Teixeira, FA Boscoli, JA Diniz, SA Moshkalev, I Doi

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
Original languageUndefined/Unknown
Pages (from-to)1166-1170
Number of pages5
JournalJournal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume25
Issue number4
Publication statusPublished - 2007

Keywords

  • academic journal papers
  • Geen BTA classificatie

Cite this

Biasotto, C., Daltrini, AM., Teixeira, RC., Boscoli, FA., Diniz, JA., Moshkalev, SA., & Doi, I. (2007). Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures, 25(4), 1166-1170.