Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement

G Yang; RACMM van Swaaij; S Dobrovolskiy; M Zeman

doi:10.1063/1.4862308

Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement

G Yang, RACMM van Swaaij, S Dobrovolskiy, M Zeman

Photovoltaic Materials and Devices

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Journal of Applied Physics
Volume	115
Issue number	3
DOIs	https://doi.org/10.1063/1.4862308
Publication status	Published - 2014

Bibliographical note

Article number: 034512

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10.1063/1.4862308

Cite this

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title = "Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement",

author = "G Yang and {van Swaaij}, RACMM and S Dobrovolskiy and M Zeman",

note = "Article number: 034512",

year = "2014",

doi = "10.1063/1.4862308",

language = "English",

volume = "115",

pages = "1--8",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "3",

}

TY - JOUR

T1 - Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement

AU - Yang, G

AU - van Swaaij, RACMM

AU - Dobrovolskiy, S

AU - Zeman, M

N1 - Article number: 034512

PY - 2014

Y1 - 2014

U2 - 10.1063/1.4862308

DO - 10.1063/1.4862308

M3 - Article

SN - 0021-8979

VL - 115

SP - 1

EP - 8

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -