Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.

G Zhu, Y Dai, D Shu, Y Xiao, Y Yang, J Wang, B Sun, R Boom

    Research output: Contribution to journalArticleScientificpeer-review

    11 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1036-1040
    Number of pages5
    JournalIntermetallics
    Volume19
    Publication statusPublished - 2011

    Keywords

    • CWTS 0.75 <= JFIS < 2.00

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