Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.

G Zhu, Y Dai, D Shu, Y Xiao, Y Yang, J Wang, B Sun, R Boom

Research output: Contribution to journal › Article › Scientific › peer-review

18 Citations (SciVal)

Keywords

@article{ad09f5fd585844338530efc112dfdefc,

title = "Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations.",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "G Zhu and Y Dai and D Shu and Y Xiao and Y Yang and J Wang and B Sun and R Boom",

year = "2011",

language = "English",

volume = "19",

pages = "1036--1040",

journal = "Intermetallics",

issn = "0966-9795",

publisher = "Elsevier",

}