Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients

M Griglione, TJ Anderson, YM Haddara, ME Law, KS Jones, A van Bogaard

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{52f701e2fb0e458cb7304cc431851da9,

title = "Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "M Griglione and TJ Anderson and YM Haddara and ME Law and KS Jones and {van Bogaard}, A",

year = "2000",

language = "Undefined/Unknown",

volume = "88",

pages = "1366--1372",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "3",

}

TY - JOUR

T1 - Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients

AU - Griglione, M

AU - Anderson, TJ

AU - Haddara, YM

AU - Law, ME

AU - Jones, KS

AU - van Bogaard, A

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 0021-8979

VL - 88

SP - 1366

EP - 1372

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -