Direct correspondence between HEB current-voltage characteristics and the current-dependent resistive transition

R Barends, M Hajenius, JR Gao, TM Klapwijk

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 16th Int. Symposium on Space Terahertz Technology (ISSTT)
Editors	J et al Stake et al
Publisher	Chalmers University of Technology
Pages	416-419
Number of pages	4
Publication status	Published - 2005

Name
Publisher	Chalmers University of Technology

niet opgevoerd in 2005

Keywords

@inproceedings{ebbb36700f4f414ea6a764e3ba110727,

title = "Direct correspondence between HEB current-voltage characteristics and the current-dependent resistive transition",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "R Barends and M Hajenius and JR Gao and TM Klapwijk",

note = "niet opgevoerd in 2005",

year = "2005",

language = "Undefined/Unknown",

publisher = "Chalmers University of Technology",

pages = "416--419",

editor = "{et al Stake et al}, J",

booktitle = "Proceedings of the 16th Int. Symposium on Space Terahertz Technology (ISSTT)",

}

Direct correspondence between HEB current-voltage characteristics and the current-dependent resistive transition. / Barends, R; Hajenius, M; Gao, JR et al.
Proceedings of the 16th Int. Symposium on Space Terahertz Technology (ISSTT). ed. / J et al Stake et al. Chalmers University of Technology, 2005. p. 416-419.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Direct correspondence between HEB current-voltage characteristics and the current-dependent resistive transition

AU - Barends, R

AU - Hajenius, M

AU - Gao, JR

AU - Klapwijk, TM

N1 - niet opgevoerd in 2005

PY - 2005

Y1 - 2005

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 416

EP - 419

BT - Proceedings of the 16th Int. Symposium on Space Terahertz Technology (ISSTT)

A2 - et al Stake et al, J

PB - Chalmers University of Technology

ER -